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| www.fairchildsemi.com KA5Q1265RFH Features * * * * * * * * * * Fairchild Power Switch(FPS) Description The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. The integrated PWM controller includes the fixed oscillator, the under voltage lock out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shut down protection, the over voltage protection, and the temperature compensated precision current sources for loop compensation and fault protection circuitry. Compared to a discrete MOSFET and a controller or a RCC switching converter solutions, a Fairchild Power Switch(FPS) can reduce the total number of components, design size, and weight, so it will improve efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in a quasi-resonant converter as a C-TV power supply. TO-3PF-5L Quasi Resonant Converter Controller Internal Burst Mode Controller for Stand-by Mode Pulse by Pulse Current Limiting Over Current Latch Protection Over Voltage Protection (Vsync: Min. 11V) Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode Primary Side Regulation 1. Drain 2. GND 3. VCC 4. Feedback 5. Sync Internal Block Diagram VCC DRAIN 3 + 32V + -1% 11V on 12V off Burst Mode 3.5V/1.25V Internal BIAS 1 + VREF + UVLO 15V/9V + S Ro n QB Rof f Roff Ron SYNC 5 Normal Mode 4.6V/2.6V VREF + - OSC R Ifb LEB 450ns FEEDBACK 4 2.5R R + Idelay 1V + S Q Offset + 7.5V Delay 80ns + - OLP Power on Reset OCL Thermal Shut Down Power on Reset (VCC=6.5V) + - Rsense 1V R Q S R Sync 12V 2 SOURCE OVP Rev.1.0.0 (c)2004 Fairchild Semiconductor Corporation KA5Q1265RFH Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Parameter Drain-Gate Voltage (RGS=1M) Gate-Source (GND) Voltage Drain Current Pulsed (2) Symbol VDGR VGS IDM ID ID EAS VCC Vsync VFB PD TJ TA TSTG Rthjc Value 650 30 36 8.3 5.3 950 40 -0.3 to 13V -0.3 to VCC 95 +150 -25 to +85 -55 to +150 1.31 Unit V V ADC ADC ADC mJ V V V W C C C C/W Continuous Drain Current (Tc = 25C) Continuous Drain Current (TC=100C) Single Pulsed Avalanch Energy Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range Thermal Resistance (3) Notes: 1. Tj = 25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 7mH, VDD = 50V, RG = 25, starting Tj = 25C 4. L = 13uH, starting Tj = 25C 2 KA5Q1265RFH Electrical Characteristics (SFET Part) (Ta=25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-source on Resistance (Note) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge Note: 1. Pulse test : Pulse width 300S, duty 2% Symbol BVDSS IDSS RDS(ON) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Condition VGS = 0V, ID = 50A VDS = Max, Rating, VGS = 0V VDS= 0.8*Max., Rating VGS = 0V, TC = 85C VGS=10V, ID=6A VGS=0V, VDS=25V, f = 1MHz VDD=0.5BVDSS, ID=12.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=12.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) Min. 650 - Typ. Max. 0.75 175 32 42 106 330 110 98 13 40 200 300 0.9 227 41 94 222 670 230 127 17 52 Unit V A A 2400 3120 pF nS nC 3 KA5Q1265RFH Electrical Characteristics (Continued) (Ta=25C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage SENSEFET SECTION Drain To PKG Breakdown Voltage Drain To Source Breakdown Voltage Drain To Source Leakage Current OSCILLATOR SECTION Initial Frequency Voltage Stability Temperature Stability (Note2) Maximum Duty Cycle Minimum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current PROTECTION SECTION Over Voltage Protection Over Current Latch Voltage (Note2) Thermal Shutdown Temp. VOVP VOCL TSD Vsync 11V 11 0.9 140 12 1.0 160 13 1.1 V V C IFB VSD IDELAY VFB = GND Vfb 6.9V VFB = 5V 0.7 6.9 4 0.9 7.5 5 1.1 8.1 6 mA V A FOSC FSTABLE FOSC DMAX DMIN 12V Vcc 23V -25C Ta 85C 18 0 0 92 20 1 5 95 22 3 10 98 0 kHz % % % % BVpkg BVdss Idss 60HZ AC, Ta = 25C Ta = 25C Vdrain = 400V, Ta = 25C 3500 650 200 V V uA VSTART VSTOP VFB = GND VFB = GND 14 8 15 9 16 10 V V Symbol Condition Min. Typ. Max. Unit Note: 1. These parameters is the current flowing in the Control IC. 2. These parameters, although guaranteed, are tested in EDS(wafer test) process. 3. These parameters indicate Inductor Current. 4 KA5Q1265RFH Electrical Characteristics (Continued) (Ta=25C unless otherwise specified) Parameter Sync SECTION Normal Sync High Threshold Voltage Normal Sync Low Threshold Voltage Burst Sync High Threshold Voltage Burst Sync Low Threshold Voltage BURST MODE SECTION Burst mode Low Threshold Voltage Burst mode High Threshold Voltage Burst mode Enable Feedback Voltage Burst mode Peak Current Limit PRIMARY SIDE REGULATION SECTION Primary Regulation Threshold Voltage Primary Regulation Transconductance Peak Current Limit(Note3) TOTAL DEVICE SECTION Start Up Current Operating Supply Current (Note1) ISTART IOP IOP(MIN) IOP(MAX) Vfb = GND, VCC = 14V Vfb = GND, VCC = 16V Vfb = GND, VCC = 10V Vfb = GND, VCC = 28V 10 18 mA 0.1 0.2 mA VPR GPR IPK Ifb = 700uA, Vfb = 4V 32.0 2.0 7.04 32.5 2.6 8.0 33.0 8.96 V mA/V A VBURL VBURH VBEN IBU_PK Vfb = 0V Vfb = 0V Vcc = 10.5V Vcc = 10.5V 10.4 11.4 0.7 0.65 11.0 12.0 1.0 0.85 11.6 12.6 1.3 1.1 V V V A VNSH VNSL VBSH VBSL Vcc = 16V, Vfb = 5V Vcc = 16V, Vfb = 5V Vcc = 10.5V, Vfb = 0V Vcc = 10.5V, Vfb = 0V 4.0 2.3 3.2 1.1 4.6 2.6 3.6 1.3 5.2 2.9 4.0 1.5 V V V V Symbol Condition Min. Typ. Max. Unit CURRENT LIMIT(SELF-PROTECTION)SECTION Note: 1. These parameters is the current flowing in the Control IC. 2. These parameters, although guaranteed, are tested in EDS(wafer test) process. 3. These parameters indicate Inductor Current. 5 KA5Q1265RFH Typical Performance Characteristics 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 Temp.(C) 100 125 150 1.10 1.06 1.02 0.98 0.94 0.90 -25 0 25 50 75 Temp.(C) 100 125 150 Figure 1. Start Voltage 1.10 1.08 Figure 2. Stop Voltage 1.05 1.01 1.00 0.94 0.95 0.87 0.90 0.85 0 25 50 75 Temp.(C) 100 125 150 0.80 -25 -25 0 25 50 75 Temp.(C) 100 125 150 Figure 3. Stand by Current 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 Temp.(C) 100 125 150 1.10 1.06 1.02 0.98 0.94 0.90 -25 Figure 4. Operating Current 0 25 50 75 Temp.(C) 100 125 150 Figure 5. Initial Frequency Figure 6. Maximum Duty 6 KA5Q1265RFH Typical Performance Characteristics (Continued) 1.50 1.20 0.90 0.60 0.30 0.00 -25 0 25 50 75 Temp.(C) 100 125 150 1.20 1.12 1.04 0.96 0.88 0.80 -25 0 25 50 75 Temp.(C) 100 125 150 Figure 7. Feedback Offset Voltage 1.10 1.06 1.02 0.98 0.94 0.90 -25 0 25 50 75 Temp.(C) 100 125 150 1.10 1.06 1.02 0.98 0.94 0.90 -25 Figure 8. Feedback Source Current 0 25 50 75 Temp.(C) 100 125 150 Figure 9. Over Voltage Protection Figure 10. Shutdown Feedback Voltage 1.10 1.40 1.05 1.20 1.00 0.95 0.90 0.85 -25 0 25 50 75 Temp.(C) 100 125 150 1.00 0.80 0.60 -25 0 25 50 75 Temp.(C) 100 125 150 Figure 11. ShutDown Delay Current Figure 12. Burst Mode Enable Feedback Voltage 7 KA5Q1265RFH Typical Performance Characteristics (Continued) 1.10 1.06 1.02 0.98 0.94 0.90 -25 0 25 50 Temp.(C) 75 100 125 1.10 1.06 1.02 0.98 0.94 0.90 -25 0 25 50 75 Temp.(C) 100 125 150 Figure 13. Burst Mode Low Threshold Voltage Figure 14. Burst Mode High Threshold Voltage 1.10 1.06 1.02 0.98 0.94 0.90 -25 0 25 50 75 Temp.(C) 100 125 150 1.10 1.06 1.02 0.98 0.94 0.90 -25 0 25 50 75 Temp.(C) 100 125 150 Figure 15. Burst Mode Sync. High Threshold Voltage Figure 16. Burst Mode Sync. Low Threshold Voltage 1.10 1.06 1.02 0.98 0.94 0.90 -25 0 25 50 75 Temp.(C) 100 125 150 1.20 1.12 1.04 0.96 0.88 0.80 -25 0 25 50 75 Temp.(C) 100 125 150 Figure 17. Primary Voltage Figure 18. Primary Mode Gain 8 KA5Q1265RFH Typical Performance Characteristics (Continued) 1.10 1.06 1.02 0.98 0.94 0.90 -25 0 25 50 75 Temp.(C) 100 125 150 1.10 1.06 1.02 0.98 0.94 0.90 -25 0 25 50 75 Temp.(C) 100 125 150 Figure 19. Peak Current Limit 1.10 1.06 1.02 0.98 0.94 0.90 -25 0 25 50 75 Temp.(C) 100 125 150 1.10 1.06 1.02 0.98 0.94 0.90 Figure 20. Burst Mode Peak Current Limit -25 0 25 50 75 Temp.(C) 100 125 150 Figure 21. Normal Mode Sync. High Threshold Voltage Figure 21. Normal Mode Sync. Low Threshold Voltage Typical Performance Characteristics(MOSFET Part) EAS-TCH 1000 AVALANCHE ENERGY, E AS[mJ] 100 800 (t), Thermal Response D=0.5 0.2 0.1 600 10 -1 0.05 0.02 0.01 single pulse 400 200 0 25 50 75 100 125 150 Z Initial Junction Temperature, TJ [oC] Figure 22. Temperature (TC) vs. Eas Curve JC 10-2 10-5 10-4 10-3 10-2 10-1 100 /t 12 3. TJM - TC = PDM * Z JC (t) Notes : 1. Z JC 101 t1 Figure 23. Transient Thermal Response Curve 9 KA5Q1265RFH Package Dimensions TO-3PF-5L(Forming) 10 KA5Q1265RFH Ordering Information Product Number KA5Q1265RFHYDTU Package TO-3PF-5L(Forming) Operating Temp. -25C to +85C 11 KA5Q1265RFH DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 5/31/04 0.0m 001 Stock#DSxxxxxxxx 2004 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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